Trench gate trench field plate vertical MOSFET
US9660021B1 · kind B1 · utility
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4References
7Claims
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Key dates
| Filing date | Jan 11, 2017 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Jan 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.