Semiconductor film with adhesion layer and method for forming the same
US9660023B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 16, 2015 |
| Grant date | May 23, 2017 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide including a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material including the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.