Nitride semiconductor polarization controlled device

US9660134B1 · kind B1 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• John E. Northrup · Palo Alto, US
• Thomas Wunderer · Palo Alto, US
• Jeng Ping Lu · San Jose, US
• Noble M. Johnson · Menlo Park, US

Key dates

• Filing date: Apr 8, 2016
• Grant date: May 23, 2017
• Expiry date: Apr 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.