Oxide sintered compact, its production method, and raw material powder for producing oxide sintered compact
US9663405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2010 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.