Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films

US9663547B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Clément Lansalot-Matras · Tsukuba, JP
• Julien Lieffrig · Soucy, FR
• Hana Ishii · Tsukuba, JP
• Christian Dussarrat · Tokyo, JP

Key dates

• Filing date: Dec 23, 2014
• Grant date: May 30, 2017
• Expiry date: Feb 9, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45553
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae:wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing thin films on substrates via vapor deposition processes.