High-throughput system and method for post-implantation single wafer warm-up
US9663854B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Mar 11, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.