High purity metallic top coat for semiconductor manufacturing components
US9663870B2 · kind B2 · utility
7Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2013 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12764
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for coating a component for use in a semiconductor chamber for plasma etching includes providing a component for use in a semiconductor manufacturing chamber, loading the component into a deposition chamber, cold spray coating a metal powder onto the component to form a coating on the component, and anodizing the coating to form an anodization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.