Titanium target for sputtering
US9666418B2 · kind B2 · utility
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5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2012 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.