Electro-migration enhancing method for self-forming barrier process in copper mettalization
US9666524B2 · kind B2 · utility
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Key dates
| Filing date | Apr 14, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a barrier on both the sidewalls and bottom of a via and the resulting device are provided. Embodiments include forming a metal line in a substrate; forming a Si-based insulating layer over the metal line and the substrate; forming a via in the Si-based insulating layer down to the metal line; forming a dual-layer Mn/MnN on sidewalls and a bottom surface of the via; and filling the via with metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.