Patent · US Active

Semiconductor device

US9666530B1 · kind B1 · utility

2Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2015
Grant dateMay 30, 2017
Priority date
Expiry dateDec 28, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/37001
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a first dielectric over the semiconductor substrate. The semiconductor device also includes a conductive layer disposed in the first dielectric and a second dielectric disposed on the conductive layer. In the semiconductor device, at least a portion of the conductive layer is exposed from the first dielectric and second dielectric. The semiconductor device further includes a conductive trace partially over the second dielectric and in contact with the exposed portion of the conductive layer. In the semiconductor device, the conductive trace is connected to the conductive pad at one end.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.