Airgap formation between source/drain contacts and gates

US9666533B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Veeraraghavan S. Basker · Schenectady, US
• Kangguo Cheng · Schenectady, US
• Theodorus E. Standaert · Clifton Park, US
• Junli Wang · Slingerlands, US

Key dates

• Filing date: Jun 30, 2016
• Grant date: May 30, 2017
• Expiry date: Jun 30, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

After forming a source/drain contact including a source/drain contact liner and a source/drain contact conductor surrounded by the source/drain contact liner to contact one of source/drain regions formed on opposite sides of a functional gate structure, vertical portions of the source/drain contact liner are recessed partially or completely to provide a cavity between the functional gate structure and the source/drain contact conductor. An etch resistant layer is deposited over the functional gate structure, each source/drain contact and each cavity to pinch off each cavity, thus forming an airgap between the functional gate structure and each source/drain contact.