On-SOI integrated circuit equipped with a device for protecting against electrostatic discharges

US9666577B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Yohann Solaro · Grenoble, FR
• Sorin Cristoloveanu · Seyssinet-Pariset, FR
• Claire Fenouillet-Beranger · Grenoble, FR
• Pascal Fonteneau · Theys, FR

Key dates

• Filing date: Aug 4, 2014
• Grant date: May 30, 2017
• Expiry date: Aug 4, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.