High thermal budget magnetic memory
US9666640B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2016 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Mar 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods for forming a semiconductor device are disclosed. The method includes forming a storage unit of a magnetic memory cell. A bottom electrode and a fixed layer are formed. The fixed layer includes a composite spacer layer disposed on the bottom electrode. The composite spacer layer includes a base layer and an amorphous buffer layer disposed over the base layer. A reference layer is disposed on the composite spacer layer. The amorphous buffer layer serves as a template for the reference layer to have a desired crystalline structure in a desired orientation. At least one tunneling barrier layer is formed over the fixed layer. A storage layer is formed over the tunneling barrier layer and a top electrode is formed over the storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.