Semiconductor device with semiconductor mesa including a constriction

US9666665B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johannes Georg Laven · Taufkirchen, DE
• Roman Baburske · Otterfing, DE
• Matteo Dainese · Munich, DE
• Peter Lechner · Vaterstetten, DE

Key dates

• Filing date: Apr 9, 2014
• Grant date: May 30, 2017
• Expiry date: Jan 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A semiconductor device includes a body zone in a semiconductor mesa, which is formed between neighboring control structures that extend from a first surface into a semiconductor body. A drift zone forms a first pn junction with the body zone. In the semiconductor mesa, the drift zone includes a first drift zone section that includes a constricted section of the semiconductor mesa. A minimum horizontal width of the constricted section parallel to the first surface is smaller than a maximum horizontal width of the body zone. An emitter layer between the drift zone and the second surface parallel to the first surface includes at least one first zone of a conductivity type of the drift zone.