Vertical bipolar junction transistor and manufacturing method thereof
US9666700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2014 |
| Grant date | May 30, 2017 |
| Priority date | — |
| Expiry date | Dec 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. The manufacturing cost of the vertical bipolar junction transistor can be lowered and a current gain can be elevated using a low-cost BCD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.