FinFET transistor with epitaxial structures

US9666715B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chung-Fu Chang · Tainan, TW
• Chun-Hsien Lin · Tainan, TW
• Chen-Yi Weng · New Taipei, TW

Key dates

• Filing date: Jan 19, 2015
• Grant date: May 30, 2017
• Expiry date: Jan 19, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A field effect transistor with epitaxial structures includes a fin-shaped structure and a metal gate across the fin-shaped structure. The metal gate includes a pair of recess regions disposed on two sides of the bottom of the metal gate.