Method for etching features in dielectric layers
US9673058B1 · kind B1 · utility
10Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2016 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a silicon oxide containing etch layer disposed below a patterned mask in a chamber is provided. An etch gas comprising a tungsten containing gas is flowed into the chamber. The etch gas comprising the tungsten containing gas is formed into a plasma. The silicon oxide etch layer is exposed to the plasma formed from the etch gas comprising the tungsten containing gas. Features are etched in the silicon oxide etch layer while exposed to the plasma formed from the etch gas comprising the tungsten containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.