Patent · US Active

High frequency filter for improved RF bias signal stability

US9673069B2 · kind B2 · utility

1Cited by

5References

14Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Yuri Trachuk · San Jose, US
Robert Chebi · Redwood City, US
Carl W. Almgren · Fort Collins, US

Key dates

Filing date	Jul 18, 2013
Grant date	Jun 6, 2017
Priority date	—
Expiry date	Sep 9, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH05H2242/26
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.