Film forming apparatus, and method of manufacturing semiconductor device
US9673092B2 · kind B2 · utility
2Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Jun 6, 2017 |
| Priority date | — |
| Expiry date | Apr 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.