Patent · US Active

TFD I/O partition for high-speed, high-density applications

US9679613B1 · kind B1 · utility

1Cited by
144References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 6, 2016
Grant dateJun 13, 2017
Priority date
Expiry dateMay 6, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18165
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A microelectronic package can include a substrate having first and second surfaces, first, second, and third microelectronic elements each having a surface facing the first surface, terminals exposed at the second surface, and leads electrically connected between contacts of each microelectronic element and the terminals. The substrate can have first, second, and third spaced-apart apertures having first, second, and third parallel axes extending in directions of the lengths of the apertures. The contacts of the first, second, and third microelectronic elements can be aligned with one of the first, second, or third apertures. The terminals can include first and second sets of first terminals configured to carry address information. The first set can be connected with the first and third microelectronic elements and not with the second microelectronic element, and the second set can be connected with the second microelectronic element and not with the first or third microelectronic elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.