Combined electrostatic lens system for ion implantation
US9679739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method are provided for implanting ions at low energies into a workpiece. An ion source configured to generate an ion beam is provided, wherein a mass resolving magnet is configured to mass resolve the ion beam. The ion beam may be a ribbon beam or a scanned spot ion beam. A mass resolving aperture positioned downstream of the mass resolving magnet filters undesirable species from the ion beam. A combined electrostatic lens system is positioned downstream of the mass analyzer, wherein a path of the ion beam is deflected and contaminants are generally filtered out of the ion beam, while concurrently decelerating and parallelizing the ion beam. A workpiece scanning system is further positioned downstream of the combined electrostatic lens system, and is configured to selectively translate a workpiece in one or more directions through the ion beam, therein implanting ions into the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.