Patent · US Active

Method for removing crystal originated particles from a crystalline silicon body

US9679774B2 · kind B2 · utility

1Cited by

4References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Peter Irsigler · Ried im Innkreis, AT

Key dates

Filing date	Mar 18, 2014
Grant date	Jun 13, 2017
Priority date	—
Expiry date	Nov 29, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/107
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes increasing a surface area of at least one of the first and second surfaces. The method further includes oxidizing the increased surface area at a temperature of at least 1000° C. and for a duration of at least 20 minutes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.