Patent · US Active

Semiconductor device and manufacturing method thereof

US9679901B1 · kind B1 · utility

2Cited by
6References
10Claims
0Family size

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Key dates

Filing dateOct 18, 2016
Grant dateJun 13, 2017
Priority date
Expiry dateOct 18, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76224
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a plurality of active areas, and an isolation structure. The substrate has a device region and a peripheral region surrounding the device region. The active areas are located in the substrate in the device region. When viewed from above, the edges of the ends of the active areas adjacent to the boundary of the device region are aligned with each other, and the width of the ends of the active areas adjacent to the boundary of the device region is greater than the width of the other portions of the active areas. The isolation structure is disposed in the substrate and surrounds the active areas and is located in the peripheral region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.