Power MOSFET with seperate gate and field plate trenches
US9680004B2 · kind B2 · utility
5Cited by
0References
15Claims
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Assignee
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Key dates
| Filing date | Jul 8, 2015 |
| Grant date | Jun 13, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
A power MOSFET includes a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main surface. The power MOSFET further includes a field electrode in a field plate trench in the main surface. The field plate trench has an extension length in a first direction which is less than double and more than half of an extension length of the field plate trench in a second direction perpendicular to the first direction, the first and the second directions being parallel to the main surface. The gate electrode includes a gate electrode material which comprises a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.