Method of initializing 3D non-volatile memory device
US9685235B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 14, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A 3D non-volatile memory device may include a dummy string selection line, string selection lines, wordlines, bitlines, a ground selection line, and memory layers. Each of the memory layers comprising channel lines respectively coupled to the bitlines via first ends and coupled to a common source line of the memory layer via second ends. The dummy string selection line, the string selection lines, the wordlines, and the ground selection line intersect with the channel lines, and each of the channel lines defines a memory string. Initializing the 3D non-volatile memory device may include programming string selection transistors coupled with the string selection lines to have one or more threshold values, and programming a dummy string selection transistor coupled with the dummy string selection line to have a predetermined threshold value, such that the dummy string selection transistor together with the string selection transistors function as string selection transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.