Patent · US Active

Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALD

US9685325B2 · kind B2 · utility

0Cited by
5References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 9, 2015
Grant dateJun 20, 2017
Priority date—
Expiry dateJul 9, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0262
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.