Method of forming semiconductor device
US9685383B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | May 13, 2015 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | May 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.