Semiconductor device and method of forming recesses in conductive layer to detect continuity for interconnect between semiconductor die and substrate
US9685402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2011 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Dec 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/3436
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor die with composite bump structures over a surface of the semiconductor die. A conductive layer is formed over the substrate. The conductive layer has a channel in an interconnect site of the conductive layer. The channel extends beyond a footprint of the composite bump structures. The semiconductor die is disposed over the substrate. The bump material of the composite bump structures is melted. The composite bump structures are pressed over the interconnect site of the conductive layer so that the melted bump material flows into the channel. Electrical continuity between the composite bump structures and conductive layer is detected by a presence of the bump material in the channel. No electrical continuity between the composite bump structures and conductive layer is detected by an absence of the bump material in the channel. The electrical continuity can be detected by visual inspection or X-ray.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.