Reversible resistivity memory with crystalline silicon bit line

US9685484B1 · kind B1 · utility

Assignee

• Sandisk Technologies, Inc. · US

Inventors

• Peter Rabkin · Cupertino, US
• Perumal Ratnam · Fremont, US
• Masaaki Higashitani · Cupertino, US
• Chris Petti · Mountain View, US

Key dates

• Filing date: Jul 20, 2016
• Grant date: Jun 20, 2017
• Expiry date: Jul 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

Technology is described for reversible resistivity memory having a crystalline silicon bit line. In one aspect, a memory structure comprises a hollow pillar of crystalline silicon inside of reversible resistivity material. The crystalline silicon may serve as a bit line. The memory structure may further comprise conductive material that forms word lines coupled to the outer surface of the reversible resistivity material. A memory cell comprises a portion of the reversible resistivity material between the crystalline silicon and one of the word lines. In one aspect, the hollow pillar of crystalline silicon surrounds a gate oxide, which surrounds a conductive transistor gate. Thus, the hollow pillar of crystalline silicon may function as a channel of a transistor. In one aspect, the crystalline silicon has predominantly a (100) orientation with respect to an inner surface of the reversible resistivity material. In one aspect, the crystalline silicon is a single crystal.