IGBT having an inter-trench superjunction structure

US9685506B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Florin Udrea · Cambridge, GB
• Alice Pei-Shan Hsieh · Cambridge, GB
• Gianluca Camuso · Cambridge, GB
• Chiu Ng · El Segundo, US
• Yi Tang · Torrance, US
• Rajeev Krishna Vytla · Los Angeles, US

Key dates

• Filing date: Dec 31, 2015
• Grant date: Jun 20, 2017
• Expiry date: Dec 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

There are disclosed herein implementations of an insulated-gate bipolar transistor (IGBT) having an inter-trench superjunction structure. Such an IGBT includes a drift region having a first conductivity type situated over a collector having a second conductivity type. The IGBT also includes first and second gate trenches extending through a base having the second conductivity type into the drift region, the first and second gate trenches each being bordered by an emitter diffusion having the first conductivity type. In addition, the IGBT includes an inter-trench superjunction structure situated in the drift region between the first and second gate trenches. The inter-trench superjunction structure includes one or more first conductivity regions having the first conductivity type and two or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the two or more second conductivity regions configured to substantially charge-balance the inter-trench superjunction structure.