Method for manufacturing semiconductor device having metal gate
US9685531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2016 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Sep 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method for manufacturing a semiconductor device having metal gates includes following steps. A substrate including a first transistor and a second transistor formed thereon is provided. The first transistor includes a first gate trench and the second transistor includes a second gate trench. A patterned first work function metal layer is formed in the first gate trench and followed by forming a second sacrificial masking layer respectively in the first gate trench and the second gate trench. An etching process is then performed to form a U-shaped first work function metal layer in the first gate trench. Subsequently, a two-step etching process including a strip step and a wet etching step is performed to remove the second sacrificial masking layer and portions of the U-shaped first work function metal layer to form a taper top on the U-shaped first work function metal layer in the first gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.