Reduced diffusion in metal electrode for two-terminal memory
US9685608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2014 |
| Grant date | Jun 20, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Providing for two-terminal memory that mitigates diffusion of external material therein is described herein. In some embodiments, a two-terminal memory cell can comprise an electrode layer. The electrode layer can be at least in part permeable to ionically or chemically reactive material, such as oxygen or the like. The two-terminal memory can further comprise a diffusion mitigation material disposed between the electrode layer and external material. This diffusion mitigation material can be selected to mitigate or prevent diffusion of the undesired element(s) or compound(s), to mitigate or avoid exposure of such element(s) or compound(s) to the electrode layer. Accordingly, degradation of the two-terminal memory as a result of contact with the undesired element(s) or compound(s) can be mitigated by various disclosed embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.