Sampling for OPC model building
US9690187B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Apr 3, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods for selecting the best measurement sites for OPC model calibration are disclosed. Embodiments include selecting a predetermined number, n, of structures representing an IC design layout eligible for SEM measurement; specifying an image parameter space of image parameters for the n structures; optimizing a redundancy in the image parameter space of measurement sites for the n structures; and calibrating an OPC model for the IC design layout based on the optimized redundancy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.