Patent · US Active

Linear Stage for reflective electron beam lithography

US9690213B2 · kind B2 · utility

0Cited by
12References
63Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2012
Grant dateJun 27, 2017
Priority date
Expiry dateJan 17, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31789
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A linear stacked stage suitable for REBL may include a first upper fast stage configured to translate a first plurality of wafers in a first direction along a first axis, the first upper fast stage configured to secure a first plurality of wafers; a second upper fast stage configured to translate a second plurality of wafers in a second direction along the first axis, the second upper fast stage configured to secure the second plurality of wafers, the second direction opposite to the first direction, wherein the translation of the first upper fast stage and the translation of the second upper fast stage are configured to substantially eliminate inertial reaction forces generated by motion of the first upper fast stage and the second upper fast stage; and a carrier stage configured to translate the first and second upper fast stages along a second axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.