ReRAM array configuration for bipolar operation
US9691478B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Apr 22, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory architecture has improved controllability of operations for bipolar current directions used to write data in programmable resistance memory cells, including ReRAM cells based on metal oxide memory materials. Instead of a fixed gate voltage on a specific decoder transistor or cell selection device, and a control voltage set to values that cause the decoder transistor or cell selection device to operate in a fully-on mode for one current direction or in a current moderating mode with opposite current direction. Using this technology allows symmetrical or close to symmetrical operation in both current directions with little or no effect on the array complexity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.