Device for generating a voltage reference comprising a non-volatile memory cell
US9691493B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 23, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Aug 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45676
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device for generating a reference voltage includes a first non-volatile memory cell provided with a control-gate transistor and a reading transistor. The control-gate transistor includes a gate terminal, a body, a first conduction terminal and a second conduction terminal. The first conduction terminal and the second conduction terminal are connected together to form a control-gate terminal. The reading transistor includes a gate terminal that is connected to the gate terminal of the control-gate transistor to form a floating-gate terminal, a body, a third conduction terminal and a fourth conduction terminal. The device also includes a second, equivalent, memory cell. The source terminal of the first non-volatile memory cell and the source terminal of the second equivalent memory cell are connected together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.