Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

US9691613B2 · kind B2 · utility

Assignee

• Ultratech · US

Inventors

• Andrew M. Hawryluk · Los Altos, US
• Ganesh Sundaram · Santa Clara, US
• Ritwik Bhatia · Sunnyvale, US

Key dates

• Filing date: Jun 25, 2014
• Grant date: Jun 27, 2017
• Expiry date: Jun 25, 2034

Classification

• Technology area (CPC —): General

Abstract

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.