Patent · US Active

Epitaxial wafer and a method of manufacturing thereof

US9691632B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignees

Siltronic AG · DE
Intel Corporation · US

Inventors

Peter Storck · Mehring, DE
Norbert Werner · Dodge City, US
Martin Vorderwestner · Unterreit, DE
Peter G. Tolchinsky · Beaverton, US
Irwin Yablok · Portland, US

Key dates

Filing date	Dec 3, 2013
Grant date	Jun 27, 2017
Priority date	—
Expiry date	Dec 3, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/834
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An epitaxial wafer comprises a silicon substrate wafer having first and second sides, and a silicon epitaxial layer deposited on the first side, and optionally one or more additional epitaxial layers on top of the silicon epitaxial layer, at least one of the silicon epitaxial layer or at least one of the one or more additional epitaxial layers being doped with nitrogen at a concentration of 1×1016 atoms/cm3 or more and 1×1020 atoms/cm3 or less. The epitaxial wafer is produced by depositing the silicon epitaxial layer and/or at least one of the one or more additional epitaxial layers, at a deposition temperature of 940° C. or less through chemical vapor deposition in the presence of a deposition gas atmosphere containing one or more silicon precursor compounds and one or more nitrogen precursor compounds.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.