Semiconductor structure and method for manufacturing the same
US9691704B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jun 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure comprises a first wire level, a second wire level and a via level. The first wire level comprises a first conductive feature. The second wire level is disposed on the first wire level. The second wire level comprises a second conductive feature and a third conductive feature. The via level is disposed between the first wire level and the second wire level. The via level comprises a via connecting the first conductive feature and the second conductive feature. There is a first air gap between the first conductive feature and the second conductive feature. There is a second air gap between the second conductive feature and the third conductive feature. The first air gap and the second air gap are linked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.