Fin field effect transistor and method for fabricating the same
US9691766B1 · kind B1 · utility
11Cited by
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13Claims
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Key dates
| Filing date | Apr 1, 2016 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Apr 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor (FinFET) including a substrate, a plurality of insulators, and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches and include doped regions distributed therein. The gate stack partially covers the at least one semiconductor fin and the insulators. A method for fabricating the aforesaid FinFET is also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.