Patent · US Active

Silicon buried digit line access device and method of forming the same

US9691773B2 · kind B2 · utility

5Cited by

2References

7Claims

0Family size

Assignee

NANYA TECHNOLOGY CORPORATION · TW

Inventors

Shyam Surthi · Boise, US
Lars Heineck · Dresden, DE

Key dates

Filing date	Nov 1, 2013
Grant date	Jun 27, 2017
Priority date	—
Expiry date	Nov 1, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An access device includes a plurality of first digit lines (DL) trenches extending along a first direction, buried digit lines between each DL trench, second and third trenches separating the digit lines, a filling material filling the digit line trenches comprising airgaps in each second trench, a plurality of word line (WL) trenches extending along a second direction, metal word lines deposited on the walls of the word line trenches, a filling material filling the word line trenches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.