Patent · US Active

IGBT

US9691888B1 · kind B1 · utility

1Cited by
2References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 11, 2016
Grant dateJun 27, 2017
Priority date
Expiry dateOct 11, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/519

Abstract

An IGBT includes a rectangular trench including first to fourth trenches and a gate electrode arranged inside of the rectangular trench. An n-type emitter region includes a first emitter region being in contact with the first trench, and a second emitter region being in contact with the third trench. A body contact region includes a first body contact region being in contact with the second trench, and a second body contact region being in contact with the fourth trench. A surface body region is in contact with the trenches in ranges from connection portions to the emitter regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.