Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
US9691971B2 · kind B2 · utility
4Cited by
2References
18Claims
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Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jun 27, 2017 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
Integrated circuits that include a magnetic tunnel junction (MTJ) for a magnetoresistive random-access memory (MRAM) and methods for fabricating such integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a lower electrode on a metal interconnect. The metal interconnect is disposed above a semiconductor substrate and is aligned with a normal axis that is substantially perpendicular to the semiconductor substrate. The lower electrode includes a conductive metal plug. A MTJ stack is formed on the lower electrode aligned with the normal axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.