Self-referenced read with offset current in a memory
US9697880B2 · kind B2 · utility
17Cited by
38References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Self-referenced reading of a memory cell in a memory includes first applying a read voltage across the memory cell to produce a sample voltage. After applying the read voltage, a write current is applied to the memory cell to write a first state to the memory cell. After applying the write current, the read voltage is reapplied across the memory cell. An offset current is also applied while the read voltage is reapplied, and the resulting evaluation voltage from reapplying the read voltage with the offset current is compared with the sample voltage to determine the state of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.