Patent · US Active

Ion implantation system and process

US9697988B2 · kind B2 · utility

1Cited by

4References

40Claims

0Family size

Assignee

Advanced Ion Beam Technology, Inc. · TW

Inventors

Zhimin Wan · Chandler, US
Kourosh Saadatmand · Merrimac, US
Nicholas R. White · Wenham, US

Key dates

Filing date	Oct 14, 2015
Grant date	Jul 4, 2017
Priority date	—
Expiry date	Oct 14, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/04924
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.