Manufacturing method of semiconductor device
US9698017B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 29, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Feb 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/6834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device is provided by forming a trench in a surface of a SiC substrate, positioning a protective substrate to cover the trench, and annealing the SiC substrate and the protective substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.