Capacitor structure and method of forming a capacitor structure

US9698179B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Elliot John Smith · Dresden, DE
• Sven Beyer · Dresden, DE
• Jan Hoentschel · Dresden, DE
• Alexander Ebermann · Dresden, DE

Key dates

• Filing date: Feb 12, 2016
• Grant date: Jul 4, 2017
• Expiry date: Feb 12, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

The present disclosure provides, in accordance with some illustrative embodiments, a capacitor structure comprising an active region formed in a semiconductor substrate, a MOSFET device comprising source and drain regions formed in the active region and a gate electrode formed above the active region, and a first electrode and a second electrode formed in a metallization layer above the MOSFET device, wherein the first electrode is electrically connected with the source and drain regions via respective source and drain contacts and the second electrode is electrically connected with the gate electrode via a gate contact.