Capacitor structure of integrated circuit chip and method of fabricating the same
US9698214B1 · kind B1 · utility
1Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with some embodiments of the present disclosure, a capacitor structure of an integrated circuit chip includes an insulation layer, a first electrode, and a second electrode. The insulation layer includes an insulation partition and has a first trench and a second trench separated from the first trench by the insulation partition. The first electrode is disposed in the first trench. The second electrode is disposed in the second trench. The first electrode first electrode is arranged along a spiral trajectory and surrounds a spiral channel. The second electrode is disposed within the spiral channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.