Semiconductor arrangement and formation thereof
US9698242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Jul 4, 2017 |
| Priority date | — |
| Expiry date | Jun 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/666
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement comprises a conductive contact in contact with a substantially planar first top surface of a first active area, the contact between and in contact with a first alignment spacer and a second alignment spacer both having substantially vertical outer surfaces. The contact formed between the first alignment spacer and the second alignment spacer has a more desired contact shape then a contact formed between alignment spacers that do not have substantially vertical outer surfaces. The substantially planar surface of the first active area is indicative of a substantially undamaged structure of the first active area as compared to an active area that is not substantially planar. The substantially undamaged first active area has a greater contact area for the contact and a lower contact resistance as compared to a damaged first active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.