Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memory
US9704588B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2016 |
| Grant date | Jul 11, 2017 |
| Priority date | — |
| Expiry date | Mar 14, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Reduced errors when sensing non-volatile memory are provided by applying a current spike or preconditioning current for a group of memory cells included a selected cell. During a sense operation, a preconditioning current can be passed through a group of non-volatile memory cells. The preconditioning current is provided prior to applying at least one reference voltage to a selected word line. The preconditioning current may simulate a cell current passing through the channel during a verification phase of programming. The preconditioning current can modify a channel resistance to approximate a state during verification to provide a more stable threshold voltage for the memory cells. Preconditioning currents may be applied selectively for select reference levels, select pages, and/or select operations. Selective application of preconditioning currents based on temperature is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.